DATA SHEET
SILICON TRANSISTORS
2SB1116, 1116A
PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
FEATURES Low VCE(sat)
VCE(sat) = −0.20 V TYP. (IC = −1.0 A, IB = −50 mA) High PT in small dimension with general-purpose
PT = 0.75 W, VCEO = −50/−60 V, IC(DC) = −1.0 A Complementary transistor with 2SD1616 and 1616A...
