HF10N60
N-Channel MOSFET
Features
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RDS(on) (Max 0.85 Ω )@VGS=10V Gate Charge (Typical 28nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C)
Symbol
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2. Drain
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1. Gate
▲
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3. Source
General Description
This Power MOSFET is produced using Wisdom ’s advanced planar stripe, DMOS tech...
