D1410

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1410 DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 250V(Min) ·Collector-Emitter Saturation Voltage:V CE(sat)= 2.0V(Max) @IC= 4A ·High DC Current Gain : hFE= 2000(Min) @ IC= 2A, VCE= 2V APPLICATIONS ·Igniter applications ·High voltage switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation @ Ta=25℃ VALUE 300 250 5 6 1 2.0 UNIT V V V A A PC Collector Power Dissipation @ TC=25℃ TJ Tstg Junction Temperature Storage Temperature Range 30 150 -55~150 W ℃ ℃ isc Website：www.iscsemi.cn Free Datasheet http://www.datasheet-pdf.com/ INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD1410 TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.5A ; L= 40mH 250 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 40mA B 2.0 V VBE(sat) ICBO Base-Emitter Saturation Voltage IC= 4A; IB= 40mA B 2.5 V μA μA Collector Cutoff Current VCB= 300V; IE= 0 500 IEBO Emitter Cutoff Current VEB= 5V; IC=0 500 hFE -1 DC Current Gain IC= 2A ; VCE= 2V 2000 hFE -2 DC Current Gain IC= 4A ; VCE= 2V 200 COB Outpu...