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FGA20N120FTD

Fairchild Semiconductor

20A Trench IGBT

FGA20N120FTD 1200V, 20A Trench IGBT December 2007 FGA20N120FTD 1200V, 20A Trench IGBT Features • Field stop trench tec...


Fairchild Semiconductor

FGA20N120FTD

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Description
FGA20N120FTD 1200V, 20A Trench IGBT December 2007 FGA20N120FTD 1200V, 20A Trench IGBT Features Field stop trench technology High speed switching Low saturation voltage: VCE(sat) =1.6V @ IC = 20A High input impedance RoHS compliant tm General Description Using advanced field stop trench technology, Fairchild’s 1200V trench IGBTs offer superior conduction and switching performances, and easy parallel operation with exceptional avalanche ruggedness. This device is designed for soft switching applications. Applications Induction heating and Microvewave oven Soft switching applications C G TO-3PN G C E E Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF PD TJ Tstg TL Description Collector to Emitter Voltage Gate to Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Diode Continuous Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds @ TC = 25oC @ TC = 25 C @ TC = 100oC o Ratings 1200 ± 25 @ TC = 25oC 40 20 60 20 298 119 -55 to +150 -55 to +150 300 @ TC = 100oC Units V V A A A A W W o o o C C C Notes: 1: Repetitive rating, Pulse width limited by max. junction temperature Thermal Characteristics Symbol RθJC(IGBT) RθJC(Diode) RθJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Typ. ...




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