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FGA20S140P

Fairchild Semiconductor

Shorted Anode IGBT

FGA20S140P — 1400 V, 20 A Shorted-anode IGBT September 2013 FGA20S140P 1400 V, 20 A Shorted-anode IGBT Features • Hig...


Fairchild Semiconductor

FGA20S140P

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FGA20S140P — 1400 V, 20 A Shorted-anode IGBT September 2013 FGA20S140P 1400 V, 20 A Shorted-anode IGBT Features High Speed Switching Low Saturation Voltage: VCE(sat) =1.9 V @ IC = 20 A High Input Impedance RoHS Compliant Applications Induction Heating, Microwave Oven General Description Using advanced field stop trench and shorted-anode technology, Fairchild’s shorted-anode trench IGBTs offer superior conduction and switching performances for soft switching applications. The device can operate in parallel configuration with exceptional avalanche capability. This device is designed for induction heating and microwave oven. C GCE TO-3PN Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Description VCES VGES IC ICM (1) Collector to Emitter Voltage Gate to Emitter Voltage Collector Current Collector Current Pulsed Collector Current @ TC = 25oC @ TC = 100oC IF Diode Continuous Forward Current @ TC = 25oC IF Diode Continuous Forward Current @ TC = 100oC PD Maximum Power Dissipation Maximum Power Dissipation @ TC = 25oC @ TC = 100oC TJ Operating Junction Temperature Tstg Storage Temperature Range TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds Thermal Characteristics Symbol RθJC(IGBT) RθJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Notes: 1: Limited by Tjmax G E Ratings 1400 ±25 40 20 60 40 20 272 136 -55 to +175 -55 to +175 300 Typ. --- Max. 0.55 40 Unit...




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