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MWI100-12E8 Dataheets PDF



Part Number MWI100-12E8
Manufacturers IXYS
Logo IXYS
Description IGBT Modules
Datasheet MWI100-12E8 DatasheetMWI100-12E8 Datasheet (PDF)

MWI 100-12 E8 MKI 100-12 E8 IGBT Modules Sixpack, H Bridge Short Circuit SOA Capability Square RBSOA 13, 21 1 2 5 6 9 10 19 17 15 13, 21 1 2 9 10 19 15 IC25 = 165 A = 1200 V VCES VCE(sat) typ. = 2.0 V 3 4 14, 20 7 8 MWI 11 12 3 4 14, 20 11 12 MKI IGBTs Symbol VCES VGES IC25 IC80 ICM VCEK tSC Ptot TC = 25°C TC = 80°C VGE = ±15 V; RG = 12 Ω; TVJ = 125°C RBSOA; clamped inductive load; L = 100 µH VCE = 900 V; VGE = ±15 V; RG = 12 Ω; TVJ = 125°C SCSOA; non-repetitive TC = 25°C Conditions TVJ .

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MWI 100-12 E8 MKI 100-12 E8 IGBT Modules Sixpack, H Bridge Short Circuit SOA Capability Square RBSOA 13, 21 1 2 5 6 9 10 19 17 15 13, 21 1 2 9 10 19 15 IC25 = 165 A = 1200 V VCES VCE(sat) typ. = 2.0 V 3 4 14, 20 7 8 MWI 11 12 3 4 14, 20 11 12 MKI IGBTs Symbol VCES VGES IC25 IC80 ICM VCEK tSC Ptot TC = 25°C TC = 80°C VGE = ±15 V; RG = 12 Ω; TVJ = 125°C RBSOA; clamped inductive load; L = 100 µH VCE = 900 V; VGE = ±15 V; RG = 12 Ω; TVJ = 125°C SCSOA; non-repetitive TC = 25°C Conditions TVJ = 25°C to 150°C Maximum Ratings 1200 ± 20 165 115 200 VCES 10 640 V V A A A µs W Features • NPT3 IGBTs - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching - short tail current for optimized performance also in resonant circuits • HiPerFREDTM diode: - fast reverse recovery - low operating forward voltage - low leakage current • Industry Standard Package - solderable pins for PCB mounting - isolated copper base plate Typical Applications Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 2.0 2.3 4.5 1.4 400 330 15 750 45 12 10 7.4 0.76 2.5 6.5 1.4 V V V mA mA nA ns ns ns ns mJ mJ nF µC 0.19 K/W 451 VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies QGon RthJC IC = 100 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C IC = 4 mA; VGE = VCE VCE = VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C • MWI - AC drives - power supplies with power factor correction • MKI - motor control . DC motor amature winding . DC motor excitation winding . synchronous motor excitation winding - supply of transformer primary winding . power supplies . welding . X-ray . battery charger VCE = 0 V; VGE = ± 20 V Inductive load, TVJ = 125°C VCE = 600 V; IC = 100 A VGE = ±15 V; RG = 12 Ω VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 600 V; VGE = 15 V; IC = 150 A (per IGBT) IXYS reserves the right to change limits, test conditions and dimensions. © 2004 IXYS All rights reserved 1-4 Free Datasheet http://www.datasheet-pdf.com/ MWI 100-12 E8 MKI 100-12 E8 Diodes Symbol IF25 IF80 Conditions TC = 25°C TC = 80°C Maximum Ratings 200 130 A A Equivalent Circuits for Simulation Conduction Symbol VF IRM trr RthJC Module Symbol TVJ TJM Tstg VISOL Md Symbol Rpin-chip dS dA RthCH Weight Conditions IF = 100 A; VGE = 0 V; TVJ = 25°C TVJ = 125°C IF = 120 A; diF/dt = -750 A/µs; TVJ = 125°C VR = 600 V; VGE = 0 V (per diode) Characteristic Values min. typ. max. 2.3 1.7 58 190 2.6 V V A ns 0.3 K/W IGBT (typ. at VGE = 15 V; TJ = 125°C) V0 = 0.95 V; R0 = 14 mΩ Free Wheeling Diode (typ. at TJ = 125°C) V0 = 1.27V; R0 = 4.3 mΩ Thermal Response Conditions operating Maximum Ratings -40...+125 +150 -40...+125 2500 3-6 °C °C °C V~ Nm IISOL ≤ 1 mA; 50/60 Hz Mounting torque (M5) Conditions IGBT (typ.) Cth1 = 0.389 J/K; Rth1 = 0.139 K/W Cth2 = 2.154 J/K; Rth2 = 0.051 K/W Free Wheeling Diode (typ.) Cth1 = 0.301 J/K; Rth1 = 0.24 K/W Cth2 = 2.005 J/K; Rth2 = 0.062 K/W Characteristic Values min. typ. max. 1.8 mΩ mm mm 0.01 300 K/W.


D1448 MWI100-12E8 MKI100-12E8


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