Document
FGA180N33AT 330V, 180A PDP Trench IGBT
April 2008
FGA180N33AT
330V, 180A PDP Trench IGBT
Features
• High Current Capability • Low saturation voltage: VCE(sat) =1.03V @ IC = 40A • High input impedance • RoHS compliant
tm
General Description
Using Novel Trench IGBT Technology, Fairchild’s new series of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential.
Applications
PDP SYSTEM
C
G
TO-3P
G CE
E
Absolute Maximum Ratings
Symbol
VCES VGES IC IC pulse (1) PD TJ Tstg TL
Description
Collector to Emitter Voltage Gate to Emitter Voltage Collector Current Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds @ TC = 25oC
Ratings
330 ± 30 180 450 390 156 -55 to +150 -55 to +150 300
Units
V V A A W W
o o o
@ TC = 25oC @ TC = 25oC @ TC = 100 C
o
C C C
Notes: 1: Repetitive test, pulse width = 100usec, Duty = 0.1 * IC_pulse limited by max Tj
Thermal Characteristics
Symbol
RθJC(IGBT) RθJA
Parameter
Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Typ.
-
Max.
0.32 40
Units
o o
C/W C/W
©2008 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FGA180N33AT Rev. A
Free Datasheet http://www.datasheet-pdf.com/
FGA180N33AT 330V, 180A PDP Trench IGBT
Package Marking and Ordering Information
Packaging Device Marking
FGA180N33AT
Device
FGA180N33ATTU
Package
TO-3P
Type
Tube
Qty per Tube
30ea
Max Qty per Box
-
Electrical Characteristics of the IGBT
Symbol
Off Characteristics BVCES ICES IGES
TC = 25°C unless otherwise noted
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250µA Collector Cut-Off Current G-E Leakage Current VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V
330 -
-
250 ±400
V µA nA
On Characteristics VGE(th) G-E Threshold Voltage IC = 250uA, VCE = VGE IC = 40A, VGE = 15V VCE(sat) Collector to Emitter Saturation Voltage IC = 180A, VGE = 15V, IC = 180A, VGE = 15V TC = 125oC Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz 3880 305 180 pF pF pF 2.5 4.0 1.1 1.68 1.89 5.5 1.4 V V V V
Switching Characteristics td(on) tr td(off) tf td(on) tr td(off) tf Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Emitter Charge Gate to Collector Charge VCE = 200V, IC = 40A, VGE = 15V VCC = 200V, IC = 40A, RG = 5Ω, VGE = 15V, Resistive Load, TC = 125oC VCC = 200V, IC = 40A, RG = 5Ω, VGE = 15V, Resistive Load, TC = 25oC 27 80 108 180 26 75 112 250 169 22 69 240 300 ns ns ns ns ns ns ns ns nC nC nC
FGA180N33AT Rev. A
2
www.fairchildsemi.com
Free Datasheet http://www.datasheet-pdf.com/
FGA180N33AT 330V, 180A PDP Trench IGBT
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
200
TC = 25 C 20V
o
Figure 2. Typical Output Characteristics
200
TC = 125 C
o
10V
10V 9V 8V
Collector Current, IC [A]
150
15V 12V
Collector Current, IC [A]
9V
8V
20V
150
15V 12V
100
7V
100
7V
50
VGE = 6V
50
VGE = 6V
0 0 2 4 Collector-Emitter Voltage, VCE [V] 6
0 0 2 4 Collector-Emitter Voltage, VCE [V] 6
Figure 3. Typical Saturation Voltage Characteristics
200
Common Emitter VGE = 15V
Figure 4. Transfer Characteristics
200
Common Emitter VCE = 20V
Collector Current, IC [A]
Collector Current, IC [A]
150
TC = 25 C TC = 125 C
o
o
TC = 25 C
o
150 T = 125oC C
100
100
50
50
0 0 1 2 Collector-Emitter Voltage, VCE [V] 3
0 2 4 6 8 Gate-Emitter Voltage,VGE [V] 10
Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level
2.1
Collector-Emitter Voltage, VCE [V]
Common Emitter VGE = 15V
Figure 6. Saturation Voltage vs. VGE
20
Common Emitter
Collector-Emitter Voltage, VCE [V]
1.8
180A
TC = 25 C
o
16
1.5
90A
12
1.2
40A
8
180A 90A 40A IC = 20A
0.9
IC = 20A
4
0.6 25
50 75 100 125 150 o Collector-EmitterCase Temperature, TC [ C]
0
0
4 8 12 16 Gate-Emitter Voltage, VGE [V]
20
FGA180N33AT Rev. A
3
www.fairchildsemi.com
Free Datasheet http://www.datasheet-pdf.com/
FGA180N33AT 330V, 180A PDP Trench IGBT
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
20
Common Emitter TC = 125 C
o
Figure 8. Capacitance Characteristics
6000
Common Emitter VGE = 0V, f = 1MHz Cies TC = 25 C
o
Collector-Emitter Voltage, VCE [V]
16
Capacitance [pF]
4000
12
8
180A 40A 90A
2000
Coes Cres
4
IC = 20A
0 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20
0 1 10 Collector-Emitter Voltage, VCE [V]
30
Figure 9. Gate charge Characteristics
15
Common Emitter
o
Figure 10. SOA Characteristics
1000
IC MAX (Pulse) 10µs
Gate-Emitter Voltage, VGE [V]
TC = 25 C
Collector Current, Ic [A]
12
VCC = 100V 200V
100
100µs 1ms 10ms
9
10
IC MAX (Continuous) DC Operation
6
.