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FGA180N33AT Dataheets PDF



Part Number FGA180N33AT
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description 180A PDP Trench IGBT
Datasheet FGA180N33AT DatasheetFGA180N33AT Datasheet (PDF)

FGA180N33AT 330V, 180A PDP Trench IGBT April 2008 FGA180N33AT 330V, 180A PDP Trench IGBT Features • High Current Capability • Low saturation voltage: VCE(sat) =1.03V @ IC = 40A • High input impedance • RoHS compliant tm General Description Using Novel Trench IGBT Technology, Fairchild’s new series of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential. Applications PDP SYSTEM C G TO-3P G CE E Absolute Maximum Ratings Sy.

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FGA180N33AT 330V, 180A PDP Trench IGBT April 2008 FGA180N33AT 330V, 180A PDP Trench IGBT Features • High Current Capability • Low saturation voltage: VCE(sat) =1.03V @ IC = 40A • High input impedance • RoHS compliant tm General Description Using Novel Trench IGBT Technology, Fairchild’s new series of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential. Applications PDP SYSTEM C G TO-3P G CE E Absolute Maximum Ratings Symbol VCES VGES IC IC pulse (1) PD TJ Tstg TL Description Collector to Emitter Voltage Gate to Emitter Voltage Collector Current Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds @ TC = 25oC Ratings 330 ± 30 180 450 390 156 -55 to +150 -55 to +150 300 Units V V A A W W o o o @ TC = 25oC @ TC = 25oC @ TC = 100 C o C C C Notes: 1: Repetitive test, pulse width = 100usec, Duty = 0.1 * IC_pulse limited by max Tj Thermal Characteristics Symbol RθJC(IGBT) RθJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Typ. - Max. 0.32 40 Units o o C/W C/W ©2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FGA180N33AT Rev. A Free Datasheet http://www.datasheet-pdf.com/ FGA180N33AT 330V, 180A PDP Trench IGBT Package Marking and Ordering Information Packaging Device Marking FGA180N33AT Device FGA180N33ATTU Package TO-3P Type Tube Qty per Tube 30ea Max Qty per Box - Electrical Characteristics of the IGBT Symbol Off Characteristics BVCES ICES IGES TC = 25°C unless otherwise noted Parameter Test Conditions Min. Typ. Max. Units Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250µA Collector Cut-Off Current G-E Leakage Current VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 330 - - 250 ±400 V µA nA On Characteristics VGE(th) G-E Threshold Voltage IC = 250uA, VCE = VGE IC = 40A, VGE = 15V VCE(sat) Collector to Emitter Saturation Voltage IC = 180A, VGE = 15V, IC = 180A, VGE = 15V TC = 125oC Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz 3880 305 180 pF pF pF 2.5 4.0 1.1 1.68 1.89 5.5 1.4 V V V V Switching Characteristics td(on) tr td(off) tf td(on) tr td(off) tf Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Emitter Charge Gate to Collector Charge VCE = 200V, IC = 40A, VGE = 15V VCC = 200V, IC = 40A, RG = 5Ω, VGE = 15V, Resistive Load, TC = 125oC VCC = 200V, IC = 40A, RG = 5Ω, VGE = 15V, Resistive Load, TC = 25oC 27 80 108 180 26 75 112 250 169 22 69 240 300 ns ns ns ns ns ns ns ns nC nC nC FGA180N33AT Rev. A 2 www.fairchildsemi.com Free Datasheet http://www.datasheet-pdf.com/ FGA180N33AT 330V, 180A PDP Trench IGBT Typical Performance Characteristics Figure 1. Typical Output Characteristics 200 TC = 25 C 20V o Figure 2. Typical Output Characteristics 200 TC = 125 C o 10V 10V 9V 8V Collector Current, IC [A] 150 15V 12V Collector Current, IC [A] 9V 8V 20V 150 15V 12V 100 7V 100 7V 50 VGE = 6V 50 VGE = 6V 0 0 2 4 Collector-Emitter Voltage, VCE [V] 6 0 0 2 4 Collector-Emitter Voltage, VCE [V] 6 Figure 3. Typical Saturation Voltage Characteristics 200 Common Emitter VGE = 15V Figure 4. Transfer Characteristics 200 Common Emitter VCE = 20V Collector Current, IC [A] Collector Current, IC [A] 150 TC = 25 C TC = 125 C o o TC = 25 C o 150 T = 125oC C 100 100 50 50 0 0 1 2 Collector-Emitter Voltage, VCE [V] 3 0 2 4 6 8 Gate-Emitter Voltage,VGE [V] 10 Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 2.1 Collector-Emitter Voltage, VCE [V] Common Emitter VGE = 15V Figure 6. Saturation Voltage vs. VGE 20 Common Emitter Collector-Emitter Voltage, VCE [V] 1.8 180A TC = 25 C o 16 1.5 90A 12 1.2 40A 8 180A 90A 40A IC = 20A 0.9 IC = 20A 4 0.6 25 50 75 100 125 150 o Collector-EmitterCase Temperature, TC [ C] 0 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 FGA180N33AT Rev. A 3 www.fairchildsemi.com Free Datasheet http://www.datasheet-pdf.com/ FGA180N33AT 330V, 180A PDP Trench IGBT Typical Performance Characteristics Figure 7. Saturation Voltage vs. VGE 20 Common Emitter TC = 125 C o Figure 8. Capacitance Characteristics 6000 Common Emitter VGE = 0V, f = 1MHz Cies TC = 25 C o Collector-Emitter Voltage, VCE [V] 16 Capacitance [pF] 4000 12 8 180A 40A 90A 2000 Coes Cres 4 IC = 20A 0 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 0 1 10 Collector-Emitter Voltage, VCE [V] 30 Figure 9. Gate charge Characteristics 15 Common Emitter o Figure 10. SOA Characteristics 1000 IC MAX (Pulse) 10µs Gate-Emitter Voltage, VGE [V] TC = 25 C Collector Current, Ic [A] 12 VCC = 100V 200V 100 100µs 1ms 10ms 9 10 IC MAX (Continuous) DC Operation 6 .


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