3SK227

High Frequency FETs 3SK227 Silicon N-Channel 4-pin MOS FET For VHF amplification unit: mm 2.8 –0.3 +0.2 +0.2 M Di ain sc te on na tin nc ue e/ d s Features 0.65±0.15 2.9±0.2 1.9±0.2 1.5 –0.3 0.65±0.15 1.1 –0.1 +0.2 Parameter Symbol Ratings 15 Unit V V V Drain to Source voltage VDS Gate 2 to Source voltage Drain current VG2S ID PD ±8 ±30 200 150 mA Allowable power dissipation Channel temperature Storage temperature mW °C °C 1: Source 2: Drain 3: Gate2 4: Gate1 Mini Type Package (4-pin) Tch Tstg −55 to +150 Marking Symbol: CX s Electrical Characteristics (Ta = 25°C) Parameter Symbol Drain current IDS Conditions min 6 typ 0 to 0.1 Gate 1 to Source voltage VG1S ±8 0.4±0.2 0.8 max 25 VDS = 10V, VG1S = 1V, VG2S = 5V VDS = VG2S = 0, VG1S = ±8V Gate 1 cut-off current Gate 2 cut-off current IG1SS IG2SS ±20 ±20 0.16 –0.06 s Absolute Maximum Ratings (Ta = 25°C) co Drain to Source voltage VDSX is Gate 1 to Source cut-off voltage VG1SC VG2SC | Yfs | Coss PG NF Forward transfer admittance ce /D Gate 2 to Source cut-off voltage M ai nt en an Input capacitance (Common Source) Ciss Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Crss Power gain Noise figure Pl ea ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low tp in o co n an in :// g nt n ce c g pa U in tin t e fo na RL ue ue ype typ ur so a d t d e Pr od t ni bo yp yp c. u e e uc ne t l d tl ife t/s ate c...