Dual ultrafast power diodes
TO -22 0A B
BYQ28E-200E
Dual ultrafast power diodes
Rev. 4 — 14 July 2011 Product data sheet
1. Product profile
1.1 Ge...
Description
TO -22 0A B
BYQ28E-200E
Dual ultrafast power diodes
Rev. 4 — 14 July 2011 Product data sheet
1. Product profile
1.1 General description
Dual ultrafast power diodes in a SOT78 (TO-220AB) plastic package. These diodes are rugged with a guaranteed electrostatic discharge voltage capability.
1.2 Features and benefits
Fast switching Guaranteed ESD capability High thermal cycling performance Low on-state losses Low thermal resistance Soft recovery minimizes power-consuming oscillations
1.3 Applications
Output rectifiers in high-frequency switched-mode power supplies
1.4 Quick reference data
Table 1. Symbol VRRM IO(AV) Quick reference data Parameter repetitive peak reverse voltage average output current square-wave pulse; δ = 0.5 ; Tmb ≤ 119 °C; both diodes conducting; see Figure 1; see Figure 2 δ = 0.5 ; tp = 25 µs; Tmb ≤ 119 °C; per diode; square-wave pulse IF = 5 A; Tj = 150 °C; see Figure 4 IF = 1 A; VR = 30 V; dIF/dt = 100 A/µs; Tj = 25 °C; ramp recovery; see Figure 5 HBM; C = 250 pF; R = 1.5 kΩ; all pins Conditions Min Typ Max Unit 200 10 V A
IFRM
repetitive peak forward current
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10
A
Static characteristics VF forward voltage 0.8 0.89 V 5 25 ns
Dynamic characteristics trr reverse recovery time 15
Electrostatic discharge VESD electrostatic discharge voltage 8 kV
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NXP Semiconductors
BYQ28E-200E
Dual ultrafast power diodes
2. Pinning information
Table 2. Pin 1 2 3 mb Pinning information Symbol Description A1 ...
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