Ordering number : ENN6652A
2SC5680
NPN Triple Diffused Planar Silicon Transistor
2SC5680
Ultrahigh-Definition CRT Disp...
Ordering number : ENN6652A
2SC5680
NPN Triple Diffused Planar Silicon
Transistor
2SC5680
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications
Features
Package Dimensions
unit : mm 2174A
[2SC5680]
16.0 3.4 5.6 3.1
High speed. High breakdown voltage(VCBO=1500V). High reliability(Adoption of HVP process). Adoption of MBIT process.
5.0
21.0 4.0
22.0
8.0
2.8 2.0
20.4
0.7
0.9
1
2
5.45
3
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25°C
1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PMLH
Ratings 1500 800 5 10 25 3.0 80 150 --55 to +150 Unit V V V A A W W °C °C
5.45
Conditions
Electrical Characteristics at Ta=25°C
Parameter Collector Cutoff Current Collector Cutoff Current Collector Sustain Voltage Emitter Cutoff Current Symbol ICBO ICES VCEO(sus) IEBO Conditions VCB=800V, IE=0 VCE=1500V, RBE=0 IC=100mA, IB=0 VEB=4V, IC=0 Ratings min typ max 10 1.0 800 1.0 Unit µA mA V mA
3.5
0.8
2.1
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Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to ...
