7D5N60F1

SEMICONDUCTOR TECHNICAL DATA General Description KHB7D5N60P1/F1 N CHANNEL MOS FIELD EFFECT TRANSISTOR KHB7D5N60P1 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies. A O C F E G B Q I FEATURES VDSS=600V, ID=7.5A Drain-Source ON Resistance : RDS(ON)=1.2 @VGS=10V K M L J D N N P H Qg(typ.)= 32.5nC DIM MILLIMETERS _ 0.2 9.9 + A 15.95 MAX B 1.3+0.1/-0.05 C _ 0.1 D 0.8 + _ 0.2 E 3.6 + _ 0.1 F 2.8 + 3.7 G H 0.5+0.1/-0.05 1.5 I _ 0.3 13.08 + J K 1.46 _ 0.1 1.4 + L _ 0.1 1.27+ M _ 0.2 2.54 + N _ 0.2 4.5 + O _ 0.2 2.4 + P _ 0.2 9.2 + Q MAXIMUM RATING (Tc=25 CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above 25 ) RATING SYMBOL KHB7D5N60P1 KHB7D5N60F1 VDSS VGSS 7.5 ID 4.6 IDP EAS EAR dv/dt 147 PD 1.18 Tj Tstg 150 0.38 W/ D 1 2 3 1. GATE 2. DRAIN 3. SOURCE UNIT 600 30 7.5* 4.6* 30* 230 14.7 4.5 48 mJ mJ V/ns W E G P V V TO-220AB KHB7D5N60F1 A A F O B C 30 K L J Q Maximum Junction Temperature Storage Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient M M H -55 ...