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K2341 Dataheets PDF



Part Number K2341
Manufacturers NEC
Logo NEC
Description 2SK2341
Datasheet K2341 DatasheetK2341 Datasheet (PDF)

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2341 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2341 is N-channel Power MOS Field Effect Transistor designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeters) 10.0 ± 0.3 4.5 ± 0.2 2.7 ± 0.2 FEATURES φ3.2 ± 0.2 • • • Low On-state Resistance RDS(on) = 0.26 Ω MAX. (VGS = 10 V, ID = 6.0 A) 3 ± 0.1 1 2 3 4 ± 0.2 High Avalanche Capability Ratings Drain to Source Voltage Gate to Source Voltage Drain .

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2341 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2341 is N-channel Power MOS Field Effect Transistor designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeters) 10.0 ± 0.3 4.5 ± 0.2 2.7 ± 0.2 FEATURES φ3.2 ± 0.2 • • • Low On-state Resistance RDS(on) = 0.26 Ω MAX. (VGS = 10 V, ID = 6.0 A) 3 ± 0.1 1 2 3 4 ± 0.2 High Avalanche Capability Ratings Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse) VDSS VGSS ID (DC) ID (pulse)* 250 ± 30 ± 11 ± 44 35 2.0 –55 to +150 150 11 320 V V A A W W °C °C A mJ 1 2 3 0.7 ± 0.1 2.54 TYP. 13.5 MIN. 0.65 ± 0.1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Total Power Dissipation (TC = 25 °C) PT1 Total Power Dissipation (Ta = 25 °C) PT2 Storage Temperature Channel Temperature Single Avalanche Current Single Avalanche Energy *PW ≤ 10 µs, Duty Cycle ≤ 1 % **Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0 1.3 ± 0.2 1.5 ± 0.2 2.54 TYP. 12.0 ± 0.2 LOW Ciss Ciss = 1090 pF TYP. 15.0 ± 0.3 2.5 ± 0.1 Tstg Tch IAS** EAS** 1. Gate 2. Drain 3. Source MP-45F(SIOLATED TO-220) Drain (D) The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Source (S) Gate (G) Body diode Document No. TC-2511 (O.D. No. TC–8070) Date Published January 1995 P Printed in Japan © 1995 Free Datasheet http://www.Datasheet-PDF.com/ 2SK2341 ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTIC Drain to Source On-state Resistance Gate to Source Cutoff Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge SYMBOL RDS(on) VGS(off)  yfs  IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr 1090 420 80 20 20 50 15 33 6.0 13 1.0 220 1.0 2.0 3.0 100 ± 100 MIN. TYP. 0.21 MAX. 0.26 4.0 UNIT Ω V S TEST CONDITIONS VGS = 10 V, ID = 6 A VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 6 A VDS = 250V, VGS = 0 VGS = ± 30 V, VDS = 0 VDS = 10 V VGS = 0 f = 1 MHz VGS = 10 V VDD = 150 V ID = 6 A, RG = 10 Ω RL = 25 Ω VGS = 10 V ID = 11 A VDD = 200 V IF = 11 A, VGS = 0 1F = 11 A di/dt = 50 A/µs µA nA pF pF pF ns ns ns ns nC nC nC V ns µC Test Circuit 1 : Avalanche Capability D.U.T. RG = 25 Ω PG. VGS = 20 → 0 V 50 Ω Test Circuit 2 : Switching Time D.U.T. L VDD PG. RG RG = 10 Ω RL VGS VDD Wave Form VGS 0 10 % VGS (on) 90 % ID 90 % 90 % ID 0 10 % td(on) ton tr td (off) toff 10 % tf BVDSS IAS ID VDD VDS VGS 0 τ τ = 1 µs Duty Cycle ≤ 1% ID Wave Form Starting Tch Test Circuit 3 : Gate Charge D.U.T. IG = 2 mA PG. 50 Ω RL V.


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