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2SC5248

Silicon NPN Power Transistor

Description

isc Silicon NPN Power Transistor 2SC5248 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SA1964 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications. ·Driver stage amplifier applications...

INCHANGE

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