isc Silicon NPN Power Transistors
BD501/B
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 50V(Min) 80V...
isc Silicon
NPN Power
Transistors
BD501/B
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 50V(Min) 80V(Min)
·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in high power audio amplifiers utilizing
complementary or quasi complementary circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BD501
55
VCBO
Collector-Base Voltage
V
BD501B
85
BD501
50
VCEO
Collector-Emitter Voltage
V
BD501B
80
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
10
A
75
W
150
℃
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT 1.39 ℃/W
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isc Silicon
NPN Power
Transistors
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-Emitter Sustaining Voltage
BD501 BD501B
IC= 30mA ;IB= 0
VCE(sat)
Collector-Emitter Saturation Voltage
BD501 IC= 5A; IB= 0.5A BD501B IC= 3.5A; IB= 0.35A
VBE(on)
BD501 Base-Emitter On Voltage
BD501B
IC= 5A; VCE= 4V IC= 3.5A; VCE= 4V
ICBO
Collector Cutoff Current
VCB= 55V;IE= 0 VCB= 85V;IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE
DC Current Gain
BD501 BD501B
IC= 5A; VCE= 4V IC= 3.5A; VCE= 4V
fT
Current-Ga...