HGTP20N60C3

HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Data Sheet December 2001 45A, 600V, UFS Series N-Channel IGBT This family of MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly developmental type TA49178. Features 45A, 600V, TC = 25oC 600V Switching SOA Capability Typical Fall Time. . . . . . . . . . . . . . . . 108ns at TJ = 150oC Short Circuit Rating Low Conduction Loss Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Packaging JEDEC STYLE TO-247 E C Ordering Information PART NUMBER HGTG20N60C3 HGTP20N60C3 HGT1S20N60C3S PACKAGE TO-247 TO-220AB TO-263AB BRAND G20N60C3 G20N60C3 G20N60C3 G COLLECTOR (FLANGE) NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in the tape and reel, i.e., HGT1S20N60C3S9A. Symbol C JEDEC TO-220AB (ALTERNATE VERSION) E G G E COLLECTOR (FLANGE) C JEDEC TO-263AB G E COLLECTOR (FLANGE) INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE...