HGTP20N60B3

HGT1S20N60B3S, HGTP20N60B3, HGTG20N60B3 Data Sheet January 2000 File Number 3723.6 40A, 600V, UFS Series N-Channel IGBTs The HGT1S20N60B3S, the HGTP20N60B3 and the HGTG20N60B3 are Generation III MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly developmental type TA49050. Features 40A, 600V at TC = 25oC 600V Switching SOA Capability Typical Fall Time. . . . . . . . . . . . . . . . . . . . 140ns at 150oC Short Circuit Rated Low Conduction Loss Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Packaging JEDEC TO-263AB Ordering Information PART NUMBER HGTP20N60B3 HGT1S20N60B3S HGTG20N60B3 PACKAGE TO-220AB TO-263AB TO-247 BRAND G20N60B3 G20N60B3 HG20N60B3 JEDEC TO-220AB (ALTERNATE VERSION) E C G E COLLECTOR (FLANGE) NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB in tape and reel, i.e., HGT1S20N60B3S9A. G Symbol C COLLECTOR (FLANGE) G JEDEC STYLE TO-247 E E C G COLLECTOR (FLANGE)...