IRLD014

IRLD014, SiHLD014 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 5 V 8.4 2.6 6.4 Single D FEATURES 60 0.20 Dynamic dV/dt Rating For Automatic Insertion End Stackable Logic-Level Gate Drive RDS(on) Specified at VGS = 4 V and 5 V 175 °C Operating Temperature Fast Switching Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT HVMDIP DESCRIPTION G S D S N-Channel MOSFET G Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertiable case style which can be stacked in multiple combinations on standard 0.1" pin centers. The dual drain servers as a thermal link to the mounting surface for power dissipation levels up to 1 W. ORDERING INFORMATION Package Lead (Pb)-free SnPb HVMDIP IRLD014PbF SiHLD014-E3 IRLD014 SiHLD014 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Maximum Power Dissipation Peak Diode Recovery dV/dtc TA = 25 °C EAS PD dV/dt TJ, Tstg for 10 s VGS at 5.0 V TA = 25 °C TA = 100 °C SYMBOL VDS VGS ID IDM LIMIT 60 ± 10 1.7 1.2 14 0.0083 490 1.3 4.5 - 55 to + 175 300d W/°C mJ W V/ns °C A UNIT V Operating Junction and Storage Temperatur...