HGTP12N60D1

HGTP12N60D1 April 1995 12A, 600V N-Channel IGBT Package JEDEC TO-220AB EMITTER COLLECTOR GATE COLLECTOR (FLANGE) Features 12A, 600V Latch Free Operation Typical Fall Time <500ns High Input Impedance Low Conduction Loss www.DataSheet4U.com Description The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25oC and +150oC. Terminal Diagram N-CHANNEL ENHANCEMENT MODE C The IGBTs are ideal for many high voltage switching applications operating at frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. PACKAGING AVAILABILITY PART NUMBER HGTP12N60D1 PACKAGE TO-220AB BRAND G12N60D1 G E Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified HGTP12N60D1 600 600 21 12 48 ±25 30A at 0.8 BVCES 75 0.6 -55 to +150 260 UNITS V V A A A V W W/oC oC oC Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES Collector-Gate Voltage RGE = 1MΩ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCGR Collector Current Continuous at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 at VGE = 15V at TC = +90oC . . . . . . . . ...