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HGTP12N60C3D

Intersil Corporation
Part Number HGTP12N60C3D
Manufacturer Intersil Corporation
Description N-Channel IGBT
Published Mar 23, 2005
Detailed Description HGTP12N60C3D, HGT1S12N60C3DS Data Sheet January 2000 File Number 4261.1 24A, 600V, UFS Series N-Channel IGBT with Anti-...
Datasheet PDF File HGTP12N60C3D PDF File

HGTP12N60C3D
HGTP12N60C3D

Overview
HGTP12N60C3D, HGT1S12N60C3DS Data Sheet January 2000 File Number 4261.
1 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors.
The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.
The much lower on-state voltage drop varies only moderately between 25oC and 150oC.
The IGBT used is the development type TA49123.
The diode used in anti-parallel with the IGBT is the development type TA49188.
The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low condu...


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