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ST13007N ST13007NFP
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS
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HIGH VOLTAGE CAPABILITY NPN TRANSI...
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ST13007N ST13007NFP
HIGH VOLTAGE FAST-SWITCHING
NPN POWER
TRANSISTORS
s s s s
s
HIGH VOLTAGE CAPABILITY
NPN TRANSISTOR LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED
APPLICATIONS s ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING s SWITCH MODE POWER SUPPLIES DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. They use a Cellular Emitter structure to enhance switching speeds.
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TO-220
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CEV V CEO V EBO IC I CM IB I BM P t ot T stg Tj Parameter ST13007N Collector-Emitter Voltage (VBE = -1.5V) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current Base Current Base Peak Current Total Dissipation at Tc ≤ 25 C Storage T emperature Max. O perating Junction Temperature
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Value ST13007NF P 700 400 9 8 16 4 8 80 -65 to 150 150 33
Uni t V V V A A A A W
o o
C C
March 1999
1/7
Free Datasheet http://www.datasheet4u.net/
ST13007N / ST13007NFP
THERMAL DATA
T O- 220 R t hj-ca se R t hj- amb Thermal Resistance Junction-case Thermal Resistance Junction-Ambient Max Max 1.56 62.5 T O-220F P 3.8 62.5
o o
C/W C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol I CEV I EBO Parameter Collector Cut-off Current (V BE = -1.5V) Emitter Cut-off Current (I C = 0) Test Cond iti...