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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ649
SWITCHING P-CHANNEL POWER MOS FET
DESCRIPTION
The 2SJ649 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver.
ORDERING INFORMATION
PART NUMBER 2SJ649 PACKAGE Isolated TO-220
FEATURES
• Low on-state resistance: RDS(on)1 = 48 mΩ MAX. (VGS = –10 V, ID = –10 A) RDS(on)2 = 75 mΩ MAX. (VGS = –4. 0 V, ID = –10 A) • Low input capacitance: Ciss = 1900 pF TYP. (VDS = –10 V, VGS = 0 V) • Built-in gate protection diode (Isolated TO-220)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse)
Note...