04N50Z

NDP04N50Z, NDD04N50Z N-Channel Power MOSFET 500 V, 2.7 W Features Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb−Free and are RoHS Compliant VDSS 500 V http://onsemi.com RDS(on) (MAX) @ 1.5 A 2.7 W ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain−to−Source Voltage Continuous Drain Current RqJC Continuous Drain Current RqJC, TA = 100°C Pulsed Drain Current, VGS @ 10 V Power Dissipation RqJC Gate−to−Source Voltage Single Pulse Avalanche Energy, ID = 3.4 A ESD (HBM) (JESD22−A114) Peak Diode Recovery Continuous Source Current (Body Diode) Maximum Temperature for Soldering Leads Operating Junction and Storage Temperature Range Symbol VDSS ID ID IDM PD VGS EAS Vesd dv/dt IS TL TJ, Tstg 3.4 2.1 14 75 ±30 120 2800 4.5 (Note 1) 3.4 260 − 55 to 150 NDP 500 3.0 1.9 12 61 NDD Unit V A A A W V mJ N−Channel D (2) G (1) S (3) V V/ns A °C °C 1 2 4 4 1 1 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. ID v 3.4 A, di/dt ≤ 200 A/ms, VDD ≤ BVDSS, TJ ≤ 150°C. 3 TO−220AB CASE 221A STYLE 5 2 3 IPAK CASE 369D STYLE 2 2 3 DPAK CASE 369AA STYLE 2 MARKING AND ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. © ...