HGTH12N50E1

HGTP10N40C1, 40E1, 50C1, 50E1, HGTH12N40C1, 40E1, 50C1, 50E1 April 1995 10A, 12A, 400V and 500V N-Channel IGBTs Packages HGTH-TYPES JEDEC TO-218AC EMITTER COLLECTOR COLLECTOR (FLANGE) GATE Features 10A and 12A, 400V and 500V VCE(ON): 2.5V Max. TFI: 1µs, 0.5µs Low On-State Voltage Fast Switching Speeds High Input Impedance No Anti-Parallel Diode Applications HGTP-TYPES JEDEC TO-220AB Power Supplies Motor Drives Protection Circuits COLLECTOR (FLANGE) EMITTER COLLECTOR GATE Description The HGTH12N40C1, HGTH12N40E1, HGTH12N50C1, HGTH12N50E1, HGTP10N40C1, HGTP10N40E1, HGTP10N50C1 and HGTP10N50E1 are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high-voltage, low on-dissipation applications such as switching regulators and motor drivers. These types can be operated directly from low-power integrated circuits. PACKAGING AVAILABILITY PART NUMBER HGTH12N40C1 HGTH12N40E1 HGTH12N50C1 HGTH12N50E1 HGTP10N40C1 HGTP10N40E1 HGTP10N50C1 HGTP10N50E1 PACKAGE TO-218AC TO-218AC TO-218AC TO-218AC TO-220AB TO-220AB TO-220AB TO-220AB BRAND G12N40C1 G12N40E1 G12N50C1 G12N50E1 G10N40C1 G10N40E1 G10N50C1 G10N50E1 E G Terminal Diagram N-CHANNEL ENHANCEMENT MODE C NOTE: When ordering, use the entire part number. Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified HGTH12N40C1 HGTH12N40E1 HGTH12N50C1 HGTH12N50E1 500 500 15 ±20 12 17.5 75 0.6 -55 to +150 HGTP10N40C1 HGTP10N40E1 400 400 -5 ±20 10 17.5 60 0.48 -55 to +150 HGTP10N50C...