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W12NC60 Dataheets PDF



Part Number W12NC60
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description STW12NC60
Datasheet W12NC60 DatasheetW12NC60 Datasheet (PDF)

N-CHANNEL 600V - 0.48Ω - 12A TO-247 PowerMesh™ II MOSFET TYPE STW12NC60 s s s s s STW12NC60 VDSS 600V RDS(on) < 0.55Ω ID 12 A TYPICAL RDS(on) = 0.48Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED 1 3 2 DESCRIPTION The PowerMESH™ II is the evolution of the first generation of MESH OVERLAY™ . The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns sw.

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N-CHANNEL 600V - 0.48Ω - 12A TO-247 PowerMesh™ II MOSFET TYPE STW12NC60 s s s s s STW12NC60 VDSS 600V RDS(on) < 0.55Ω ID 12 A TYPICAL RDS(on) = 0.48Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED 1 3 2 DESCRIPTION The PowerMESH™ II is the evolution of the first generation of MESH OVERLAY™ . The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. APPLICATIONS s SWITCH MODE POWER SUPPLIES (SMPS) s HIGH CURRENT, HIGH SPEED SWITCHING s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE TO-247 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (q) PTOT dv/dt(1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100° C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 600 600 ±30 12 8 18 190 1.52 3 –65 to 150 150 (1)ISD ≤11A, di/dt ≤100A/µ s, V DD ≤ V(BR)DSS, Tj ≤ TJMAX. Unit V V V A A A W W/ °C V/ns °C °C (•)Pulse width limited by safe operating area June 2000 1/8 Free Datasheet http://www.datasheet4u.net/ STW12NC60 THERMAL DATA Rthj-case Rthj-amb Rthc-sink Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose 0.66 30 0.1 300 °C/W °C/W °C/W °C AVALANCHE CHARACTERISTICS Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Max Value 12 850 Unit A mJ ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (V GS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 µA, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 ° C VGS = ±30V Min. 600 1 50 ± 100 Typ. Max. Unit V µA µA nA ON (1) Symbol VGS(th) R DS(on) ID(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance On State Drain Current Test Conditions VDS = VGS, ID = 250 µA VGS = 10V, ID = 6A VDS > ID(on) x RDS(on)max, VGS = 10V Min. 2 Typ. 3 0.48 Max. 4 0.55 Unit V Ω 12 A DYNAMIC Symbol gfs C iss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V, f = 1 MHz, VGS = 0 Test Conditions VDS > ID(on) x RDS(on)max, ID =6A Min. Typ. 13 2150 275 39 Max. Unit S pF pF pF 2/8 Free Datasheet http://www.datasheet4u.net/ STW12NC60 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Qg Qgs Q gd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 480V, I D = 12 A, VGS = 10V, R G = 4.7Ω Test Conditions VDD = 300V, I D = 6 A RG = 4.7Ω, VGS = 10V (see test circuit, Figure 3) Min. Typ. 20 15 65 13 28 90 Max. Unit ns ns nC nC nC SWITCHING OFF Symbol tr(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions VDD = 480V, I D = 12 A, R G = 4.7Ω, VGS = 10V (see test circuit, Figure 5) Min. Typ. 14 25 30 Max. Unit ns ns ns SOURCE DRAIN DIODE Symbol ISD ISDM (2) VSD (1) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 12 A, VGS = 0 ISD = 12 A, di/dt = 100A/µs, VDD = 100V, T j = 150° C (see test circuit, Figure 5) 590 5.6 19 Test Conditions Min. Typ. Max. 12 48 1.6 Unit A A V ns µC A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Safe Operating Area Thermal Impedance 3/8 Free Datasheet http://www.datasheet4u.net/ STW12NC60 Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/8 Free Datasheet http://www.datasheet4u.net/ STW12NC60 Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/8 Free Datasheet http://www.datasheet4u.net/ STW12NC60 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 Free Datasheet http://www.datasheet4u.net/ STW12NC60 TO-247 MECHANICAL DATA DIM. MIN. A D E F F3 F4 G H L L3 L4 L5 M 2 15.3 19.7 14.2 34.6 5.5 3 0.079 4.7 2.2 0.4 1 2 3 10.9 15.9 20.3 14.8 0.602 0.776 0.559 1.362 0.217 0.118 mm TYP. MAX. 5.3 2.6 0.8 1.4 2.4 3.4 MIN. 0.185 0.087 0.016 0.0.


2SB646A W12NC60 CD7522CS


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