HGTG7N60A4

TM HGTD7N60A4S, HGT1S7N60A4S, HGTG7N60A4, HGTP7N60A4 Data Sheet June 2000 File Number 4826.2 600V, SMPS Series N-Channel IGBT The HGTD7N60A4S, HGT1S7N60A4S, HGTG7N60A4 and HGTP7N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies. Formerly Developmental Type TA49331. Features >100kHz Operation at 390V, 7A 200kHz Operation at 390V, 5A 600V Switching SOA Capability Typical Fall Time . . . . . . . . . . . . . . . . . . . .75ns at TJ = 125oC Low Conduction Loss Temperature Compensating SABER™ Model www.intersil.com Symbol C Ordering Information G PART NUMBER HGTD7N60A4S HGT1S7N60A4S HGTG7N60A4 HGTP7N60A4 PACKAGE TO-252AA TO-263AB TO-247 TO-220AB BRAND 7N60A4 7N60A4 7N60A4 7N60A4 E NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-252AA and TO-263AB variant in tape and reel, e.g., HGTD7N60A4S9A. Packaging JEDEC STYLE TO-247 E C G JEDEC TO-220AB E C G COLLECTOR (FLANGE) COLLECTOR (FLANGE) JEDEC TO-252AA JEDEC TO-263AB G E COLLECTOR (FLANGE) G E COLL...