HGTG5N120BND

HGTG5N120BND, HGTP5N120BND, HGT1S5N120BNDS Data Sheet January 2000 File Number 4597.2 21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes The HGTG5N120BN, HGTP5N120BND, and HGT1S5N120BNDS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. The IGBT used is the development type TA49308. The Diode used is the development type TA49058 (Part number RHRD6120). The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49306. Features 21A, 1200V, TC = 25oC 1200V Switching SOA Capability Typical Fall Time. . . . . . . . . . . . . . . . 175ns at TJ = 150oC Short Circuit Rating Low Conduction Loss Thermal Impedance SPICE Model Temperature Compensating SABER™ Model www.intersil.com Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Packaging JEDEC STYLE TO-247 E C G Ordering Information PART NUMBER HGTG5N120BND HGTP5N120BND HGT1S5N120BNDS PACKAGE TO-247 TO-220AB TO-263AB BRAND 5N120BND 5N120BND 5N120BND COLLECTOR (FLANGE) NOTE: When ordering, use the enti...