HGTG34N100E2

HGTG34N100E2 April 1995 34A, 1000V N-Channel IGBT Package JEDEC STYLE TO-247 EMITTER COLLECTOR GATE Features 34A, 1000V Latch Free Operation Typical Fall Time - 710ns High Input Impedance Low Conduction Loss COLLECTOR (BOTTOM SIDE METAL) Description The HGTG34N100E2 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25oC and +150oC. The IGBTs are ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. PACKAGING AVAILABILITY PART NUMBER HGTG34N100E2 PACKAGE TO-247 BRAND G34N100E2 E G Terminal Diagram N-CHANNEL ENHANCEMENT MODE C NOTE: When ordering, use the entire part number. Formerly Developmental Type TA9895. Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified HGTG34N100E2 1000 1000 55 34 200 ±20 ±30 200A at 0.8 BVCES 208 1.67 -55 to +150 260 3 10 UNITS V V A A A V V W W/oC oC oC µs µs Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES Collector-Gate Voltage, RGE =1MΩ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VCGR Collector Current Contin...