HGTG30N60A4D

HGTG30N60A4D Data Sheet January 2000 File Number 4830 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49343. The diode used in anti-parallel is the development type TA49373. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies. Formerly Developmental Type TA49345. Features >100kHz Operation At 390V, 30A 200kHz Operation At 390V, 18A 600V Switching SOA Capability Typical Fall Time. . . . . . . . . . . . . . . . . 60ns at TJ = 125oC Low Conduction Loss Temperature Compensating SABER Model www.intersil.com Packaging JEDEC STYLE TO-247 E C G Ordering Information PART NUMBER HGTG30N60A4D NOTE: PACKAGE TO-247 BRAND 30N60A4D COLLECTOR (FLANGE) When ordering, use the entire part number. Symbol C G E INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4...