Data Sheet
HGTG20N60A4D
February 2009
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGTG20N6...
Data Sheet
HGTG20N60A4D
February 2009
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGTG20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar
transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49339. The diode used in anti-parallel is the development type TA49372.
This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies.
Formerly Developmental Type TA49341.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTG20N60A4D
TO-247
20N60A4D
NOTE: When ordering, use the entire part number.
Symbol
C
Features
>100kHz Operation At 390V, 20A
200kHz Operation At 390V, 12A
600V Switching SOA Capability Typical Fall Time . . . . . . . . . . . . . . . . 55ns at TJ = 125oC Low Conduction Loss
Temperature Compensating SABERâ„¢ Model www.fairchildsemi.com
Packaging
JEDEC STYLE TO-247
COLLECTOR (FLANGE)
G E
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,...