Semiconductor
HGTG20N120E2
34A, 1200V N-Channel IGBT
Package
JEDEC STYLE TO-247
EMITTER COLLECTOR GATE COLLECTOR (BOTTO...
Semiconductor
HGTG20N120E2
34A, 1200V N-Channel IGBT
Package
JEDEC STYLE TO-247
EMITTER COLLECTOR GATE COLLECTOR (BOTTOM SIDE METAL)
April 1995
Features
34A, 1200V Latch Free Operation Typical Fall Time - 780ns High Input Impedance Low Conduction Loss
Description
The HGTG20N120E2 is a MOS gated, high voltage switching device combining the best features of MOSFETs and bipolar
transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only moderately between +25oC and +150oC. IGBTs are ideal for many high voltage switching applications operating at frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. The development type number for this device is TA49009.
PACKAGING AVAILABILITY PART NUMBER HGTG20N120E2 PACKAGE TO-247 BRAND G20N120E2
E
Terminal Diagram
C
G
Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified
Collector-Emitter Breakdown Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES Collector-Gate Breakdown Voltage RGE = 1MΩ. . . . . . . . . . . . . . . . . . . . . . . . . . . BVCGR Collector Current Continuous At TC = +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 At TC = +90oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....