HGTG15N120C3D
May 1997
35A, 1200V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
Description
The HGTG15N120C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much ...
