HGTG12N60D1D
April 1995
12A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode
Package
JEDEC STYLE TO-247
EMITTER COLLECTOR COLLECTOR (BOTTOM SIDE METAL) GATE
Features
12A, 600V Latch Free Operation Typical Fall Time <500ns Low Conduction Loss With Anti-Parallel Diode tRR < 60ns
Description
The IGBT is a MOS gated high voltage switching d...
