HGTG10N120BND
Data Sheet January 2000 File Number 4579.3
35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyper...
HGTG10N120BND
Data Sheet January 2000 File Number 4579.3
35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGTG10N120BND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar
transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar
transistor. The IGBT used is the development type TA49290. The Diode used is the development type TA49189. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49302.
Features
35A, 1200V, TC = 25oC 1200V Switching SOA Capability Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ = 150oC Short Circuit Rating Low Conduction Loss
Packaging
JEDEC STYLE TO-247
E C G
Ordering Information
PART NUMBER HGTG10N120BND PACKAGE TO-247 BRAND 10N120BND
NOTE: When ordering, use the entire part number.
Symbol
G
E
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,95...