HGTD7N60C3

S E M I C O N D U C T O R HGTD7N60C3, HGTD7N60C3S, HGTP7N60C3 14A, 600V, UFS Series N-Channel IGBTs Packaging JEDEC TO-220AB EMITTER COLLECTOR GATE January 1997 Features 14A, 600V at TC = 25oC 600V Switching SOA Capability Typical Fall Time . . . . . . . . . . . . . . 140ns at TJ = 150oC Short Circuit Rating Low Conduction Loss COLLECTOR (FLANGE) Description The HGTD7N60C3, HGTD7N60C3S and HGTP7N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. PACKAGING AVAILABILITY PART NUMBER HGTD7N60C3 HGTD7N60C3S HGTP7N60C3 PACKAGE TO-251AA TO-252AA TO-220AB BRAND G7N60C G7N60C G7N60C3 JEDEC TO-251AA EMITTER COLLECTOR (FLANGE) COLLECTOR GATE JEDEC TO-252AA GATE EMITTER COLLECTOR (FLANGE) Terminal Diagram N-CHANNEL ENHANCEMENT MODE C NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-252AA variant in tape and reel, i.e. HGTD7N60C3S9A. Formerly Developmental Type TA49115. G E Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified...