HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, HGTD6N50E1S
March 1997
6A, 400V and 500V N-Channel IGBTs
Packages
HGTD6N40E1, HGTD...
HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, HGTD6N50E1S
March 1997
6A, 400V and 500V N-Channel IGBTs
Packages
HGTD6N40E1, HGTD6N50E1 JEDEC TO-251AA
EMITTER COLLECTOR GATE COLLECTOR (FLANGE)
Features
6A, 400V and 500V VCE(ON): 2.5V Max. TFALL: 1.0µs Low On-State Voltage Fast Switching Speeds High Input Impedance
Applications
Power Supplies Motor Drives Protective Circuits
HGTD6N40E1S, HGTD6N50E1S JEDEC TO-252AA
COLLECTOR (FLANGE)
GATE EMITTER
Description
The HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, and HGTD6N50E1S are n-channel enhancement-mode insulated gate bipolar
transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching
regulators and motor drivers. These types can be operated directly from low power integrated circuits.
PACKAGING AVAILABILITY PART NUMBER HGTD6N40E1 HGTD6N50E1 HGTD6N40E1S HGTD6N50E1S PACKAGE TO-251AA TO-251AA TO-252AA TO-252AA BRAND G6N40E G6N50E G6N40E G6N50E
E G
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
C
NOTE: When ordering, use the entire part number.
Absolute Maximum Ratings
TC = +25oC, Unless Otherwise Specified HGTD6N40E1 HGTD6N40E1S 400 400 ±20 7.5 6.0 60 0.48 -55 to +150 HGTD6N50E1 HGTD6N50E1S 500 500 ±20 7.5 6.0 60 0.48 -55 to +150 UNITS V V V A A W W/oC oC
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VCES Collector-Gate Voltage RGE = 1MΩ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VCGR Gat...