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HGTD10N50F1S Dataheets PDF



Part Number HGTD10N50F1S
Manufacturers Intersil Corporation
Logo Intersil Corporation
Description 10A/ 400V and 500V N-Channel IGBTs
Datasheet HGTD10N50F1S DatasheetHGTD10N50F1S Datasheet (PDF)

HGTD10N40F1, HGTD10N40F1S, HGTD10N50F1, HGTD10N50F1S March 1997 10A, 400V and 500V N-Channel IGBTs Packages HGTD10N40F1, HGTD10N50F1 JEDEC TO-251AA EMITTER COLLECTOR GATE COLLECTOR (FLANGE) Features • 10A, 400V and 500V • VCE(ON) 2.5V Max. • TFALL ≤1.4µs • Low On-State Voltage • Fast Switching Speeds • High Input Impedance Applications • Power Supplies • Motor Drives • Protective Circuits COLLECTOR (FLANGE) GATE EMITTER HGTD10N40F1S, HGTD10N50F1S JEDEC TO-252AA Description The HGTD10N40F1, .

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HGTD10N40F1, HGTD10N40F1S, HGTD10N50F1, HGTD10N50F1S March 1997 10A, 400V and 500V N-Channel IGBTs Packages HGTD10N40F1, HGTD10N50F1 JEDEC TO-251AA EMITTER COLLECTOR GATE COLLECTOR (FLANGE) Features • 10A, 400V and 500V • VCE(ON) 2.5V Max. • TFALL ≤1.4µs • Low On-State Voltage • Fast Switching Speeds • High Input Impedance Applications • Power Supplies • Motor Drives • Protective Circuits COLLECTOR (FLANGE) GATE EMITTER HGTD10N40F1S, HGTD10N50F1S JEDEC TO-252AA Description The HGTD10N40F1, HGTD10N40F1S, HGTD10N50F1, and HGTD10N50F1S are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching regulators and motor drivers. These types can be operated directly from low power integrated circuits. PACKAGING AVAILABILITY PART NUMBER HGTD10N40F1 HGTD10N50F1 HGTD10N40F1S HGTD10N50F1S PACKAGE TO-251AA TO-251AA TO-252AA TO-252AA BRAND G10N40 G10N50 G10N40 G10N50 Terminal Diagram N-CHANNEL ENHANCEMENT MODE C G NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-252AA variant in the tape and reel, i.e., HGTD10N40F19A. E Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified HGTD10N40F1 HGTD10N40F1S 400 400 ±20 12 10 75 0.6 -55 to +150 HGTD10N50F1 HGTD10N50F1S 500 500 ±20 12 10 75 0.6 -55 to +150 UNITS V V V A A W W/oC oC Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VCES Collector-Gate Voltage RGE = 1MΩ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VCGR Gate-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGE Collector Current Continuous at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 at TC = +90oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC90 Power Dissipation Total at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . TJ, TSTG INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS: 4,364,073 4,587,713 4,641,162 4,794,432 4,860,080 4,969,027 4,417,385 4,598,461 4,644,637 4,801,986 4,883,767 4,430,792 4,605,948 4,682,195 4,803,533 4,888,627 4,443,931 4,618,872 4,684,413 4,809,045 4,890,143 4,466,176 4,620,211 4,694,313 4,809,047 4,901,127 4,516,143 4,631,564 4,717,679 4,810,665 4,904,609 4,532,534 4,639,754 4,743,952 4,823,176 4,933,740 4,567,641 4,639,762 4,783,690 4,837,606 4,963,951 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 File Number 2425.4 3-1 Specifications HGTD10N40F1, HGTD10N40F1S, HGTD10N50F1, HGTD10N50F1S Electrical Specifications , TC = +25oC, Unless Otherwise Specified LIMITS HGTD10N40F1 HGTD10N40F1S HGTD10N50F1 HGTD10N50F1S MIN 500 2.0 MAX 4.5 250 100 2.5 2.2 2.5 2.2 UNITS V V µA µA nA V V V V V nC ns ns ns ns mJ PARAMETERS Collector-Emitter Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Collector Current Gate-Emitter Leakage Current Collector-Emitter On-Voltage SYMBOL BVCES VGE(TH) ICES TEST CONDITIONS IC = 250µA, VGE = 0V VGE = VCE, IC = 1mA TJ = TJ = +150oC, +150oC, VCE = 400V VCE = 500V MIN 400 2.0 - MAX 4.5 250 100 2.5 2.2 2.5 2.2 IGES VCE(ON) VGE = ±20V, VCE = 0V TJ = TJ = TJ = +150oC, +150oC, +25oC, IC = 5A, VGE = 10V IC = 5A, VGE = 15V IC = 5A, VGE = 10V TJ = +25oC, IC = 5A, VGE = 15V Gate-Emitter Plateau Voltage On-State Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Energy Loss Per Cycle (Off Switching Dissipation = WOFF x Frequency) Turn-Off Delay Time Fall Time Turn-Off Energy Loss Per Cycle (Off Switching Dissipation = WOFF x Frequency) Thermal Resistance Junction-toCase (IGBT) VGEP QG(ON) tD(ON) tRI tD(OFF) tFI WOFF IC = 5A, VCE = 10V IC = 5A, VCE = 10V Resistive Load, IC = 5A, VCE = 400V, RL = 80Ω, TJ = +150oC, VGE = 10V, RG = 25Ω 5.3 (Typ) 13.4 (Typ) 45 (Typ) 35 (Typ) 130 (Typ) 1400 (Typ) 0.64 (Typ) tD(OFF) tFI WOFF Inductive Load (See Figure 11), IC = 5A, VCE(CLP) = 400V, RL = 80Ω, L = 50µH, TJ = +150oC, VGE = 10V, RG = 25Ω - 375 1200 1.2 - 375 1200 1.2 ns ns mJ RθJC - 1.67 - 1.67 oC/W Typical Performance Curves 12 ICE, COLLECTOR-EMITTER CURRENT (A) ICE, COLLECTOR-EMITTER CURRENT (A) PULSE TEST, VCE = 10V PULSE DURATION = 250µs DUTY CYCLE < 2% 10 VGE = 15V VGE = 10V VGE = 6.0V PULSE DURATION = 250µs DUTY CYCLE < 0.5% TC = +25oC VGE = 5.5V VGE = 5.0V 4 VGE = 4.5V VGE = 4.0V 0 0 2 4 6 8 10 0 2 4 6 8 10 VGE, GATE-TO-EMITTER VOLTAGE (V) VGE, GATE-TO-EMITTER VOLTAGE (V) 10 8 8 TC = -55oC TC = +25 C TC = +150oC o 6 6 4 2 2 0 FIGURE 1. TYPICAL TRANSFER CHARAC.


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