HGTD10N50F1

HGTD10N40F1, HGTD10N40F1S, HGTD10N50F1, HGTD10N50F1S March 1997 10A, 400V and 500V N-Channel IGBTs Packages HGTD10N40F1, HGTD10N50F1 JEDEC TO-251AA EMITTER COLLECTOR GATE COLLECTOR (FLANGE) Features 10A, 400V and 500V VCE(ON) 2.5V Max. TFALL ≤1.4µs Low On-State Voltage Fast Switching Speeds High Input Impedance Applications Power Supplies Motor Drives Protective Circuits COLLECTOR (FLANGE) GATE EMITTER HGTD10N40F1S, HGTD10N50F1S JEDEC TO-252AA Description The HGTD10N40F1, HGTD10N40F1S, HGTD10N50F1, and HGTD10N50F1S are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching regulators and motor drivers. These types can be operated directly from low power integrated circuits. PACKAGING AVAILABILITY PART NUMBER HGTD10N40F1 HGTD10N50F1 HGTD10N40F1S HGTD10N50F1S PACKAGE TO-251AA TO-251AA TO-252AA TO-252AA BRAND G10N40 G10N50 G10N40 G10N50 Terminal Diagram N-CHANNEL ENHANCEMENT MODE C G NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-252AA variant in the tape and reel, i.e., HGTD10N40F19A. E Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified HGTD10N40F1 HGTD10N40F1S 400 400 ±20 12 10 75 0.6 -55 to +150 HGTD10N50F1 HGTD10N50F1S 500 500 ±20 12 10 75 0.6 -55 to +150 UNITS V V V A A W W/oC oC Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VCES Collecto...