HGT5A40N60A4D

HGT5A40N60A4D Data Sheet February 2000 File Number 4783.1 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGT5A40N60A4D is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49347. The diode used in anti-parallel is the development type 49374. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies. Formerly Developmental Type TA49349. Features 100kHz Operation at 390V, 40A 200kHz Operation at 390V, 20A 600V Switching SOA Capability Typical Fall Time. . . . . . . . . . . . . . . . . . 55ns at TJ = 125o Low Conduction Loss Packaging JEDEC STYLE STRETCH TO-247 E C G Ordering Information PART NUMBER HGT5A40N60A4D PACKAGE TO-247-ST BRAND 40N60A4D COLLECTOR (FLANGE) NOTE: When ordering, use the entire part number. Symbol C G E INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 ...