HGT1S3N60C3DS

HGTP3N60C3D, HGT1S3N60C3DS Data Sheet January 2000 File Number 4140.2 6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGTP3N60C3D, and HGT1S3N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49113. The diode used in anti-parallel with the IGBT is the development type TA49055. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential. Formerly Developmental Type TA49119. Features 6A, 600V at TC = 25oC 600V Switching SOA Capability Typical Fall Time. . . . . . . . . . . . . . . . 130ns at TJ = 150oC Short Circuit Rating Low Conduction Loss Hyperfast Anti-Parallel Diode Packaging JEDEC TO-220AB EMITTER COLLECTOR GATE COLLECTOR (FLANGE) Ordering Information PART NUMBER HGTP3N60C3D HGT1S3N60C3DS PACKAGE TO-220AB TO-263AB BRAND G3N60C3D G3N60C3D JEDEC TO-263AB NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in tape and reel, i.e., HGT1S3N60C3DS9A. Symbol C GATE EMITTER COLLECTOR (FLANGE) G E INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4...