N-channel MOSFET
PSMN7R6-60PS
N-channel 60 V 7.8 mΩ standard level MOSFET
Rev. 03 — 28 October 2010 Product data sheet
1. Product profil...
Description
PSMN7R6-60PS
N-channel 60 V 7.8 mΩ standard level MOSFET
Rev. 03 — 28 October 2010 Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in a TO-220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.
1.2 Features and benefits
High efficiency due to low switching and conduction losses Suitable for standard level gate drive sources
1.3 Applications
DC-to-DC converters Load switching Motor control Server power supplies
1.4 Quick reference data
Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2 VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 13; see Figure 9 VGS = 10 V; ID = 25 A; VDS = 30 V; see Figure 15; see Figure 14 VGS = 10 V; Tj(init) = 25 °C; ID = 92 A; Vsup ≤ 100 V; RGS = 50 Ω; unclamped Min Typ 5.9 Max Unit 60 92 149 7.8 V A W mΩ
Static characteristics
Dynamic characteristics QGD gate-drain charge 10.6 nC
Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy 110 mJ
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NXP Semiconductors
PSMN7R6-60PS
N-channel 60 V 7.8 mΩ standard level MOSFET
2. Pinning information
Table 2. Pin 1 2 3 mb Pinning information Symbol Description G D S D gate drain source mounting b...
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