N-Channel IGBT
HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS
April 1995
20A, 350V N-Channel, Logic Level, Voltage Clamping IGBTs
Pack...
Description
HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS
April 1995
20A, 350V N-Channel, Logic Level, Voltage Clamping IGBTs
Packages
JEDEC TO-220AB
EMITTER COLLECTOR GATE COLLECTOR (FLANGE)
Features
Logic Level Gate Drive Internal Voltage Clamp ESD Gate Protection TJ = 175oC Ignition Energy Capable
Description
This N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition circuits. Unique features include an active voltage clamp between the collector and the gate which provides Self Clamped Inductive Switching (SCIS) capability in ignition circuits. Internal diodes provide ESD protection for the logic level gate. Both a series resistor and a shunt resistor are provided in the gate circuit.
PACKAGING AVAILABILITY PART NUMBER HGTP20N35G3VL HGT1S20N35G3VL HGT1S20N35G3VLS PACKAGE T0-220AB T0-262AA T0-263AB BRAND 20N35GVL 20N35GVL 20N35GVL
COLLECTOR (FLANGE)
JEDEC TO-262AA
EMITTER COLLECTOR GATE
JEDEC TO-263AB
M A
A
COLLECTOR (FLANGE)
A
GATE EMITTER
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
COLLECTOR
NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in the tape and reel, i.e., HGT1S20N35G3VLS9A.
The development type number for this device is TA49076.
R1 GATE R2
EMITTER
Absolute Maximum Ratings
TC = +25oC, Unless Otherwise Specified HGTP20N35G3VL HGT1S20N35G3VL HGT1S20N35G3VLS 375 24 20 20 ±10 26 18 775 150 1.0 -40 to +175 260 6
Collector-Emitter B...
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