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HGT1S14N36G3VL

Fairchild Semiconductor

N-Channel IGBT

HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS December 2001 14A, 360V N-Channel, Logic Level, Voltage Clamping IGBTs P...


Fairchild Semiconductor

HGT1S14N36G3VL

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Description
HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS December 2001 14A, 360V N-Channel, Logic Level, Voltage Clamping IGBTs Packages JEDEC TO-220AB EMITTER COLLECTOR GATE COLLECTOR (FLANGE) Features Logic Level Gate Drive Internal Voltage Clamp ESD Gate Protection TJ = 175 C Ignition Energy Capable o Description This N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition circuits. Unique features include an active voltage clamp between the collector and the gate which provides Self Clamped Inductive Switching (SCIS) capability in ignition circuits. Internal diodes provide ESD protection for the logic level gate. Both a series resistor and a shunt resister are provided in the gate circuit. PACKAGING AVAILABILITY PART NUMBER HGTP14N36G3VL HGT1S14N36G3VL HGT1S14N36G3VLS PACKAGE TO-220AB TO-262AA TO-263AB BRAND 14N36GVL 14N36GVL 14N36GVL COLLECTOR (FLANGE) JEDEC TO-262AA EMITTER COLLECTOR GATE JEDEC TO-263AB COLLECTOR (FLANGE) GATE EMITTER Terminal Diagram N-CHANNEL ENHANCEMENT MODE COLLECTOR NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in the tape and reel, i.e., HGT1S14N36G3VLS9A. The development type number for this device is TA49021. R1 GATE R2 EMITTER Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS 390 24 18 14 ±10 17 12 332 100 0.67 -40 to +175 260 6 Collector-Emitter Bkd...




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