HGT1S12N60C3DS

HGTP12N60C3D, HGT1S12N60C3DS Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49123. The diode used in anti-parallel with the IGBT is the development type TA49188. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential. Formerly Developmental Type TA49182. Features 24A, 600V at TC = 25oC Typical Fall Time at TJ = 150oC . . . . . . . . . . . . . . . . 210ns Short Circuit Rating Low Conduction Loss Hyperfast Anti-Parallel Diode Packaging JEDEC TO-220AB E C G COLLECTOR (FLANGE) Ordering Information PART NUMBER HGTP12N60C3D HGT1S12N60C3DS PACKAGE TO-220AB TO-263AB BRAND 12N60C3D 12N60C3D JEDEC TO-263AB COLLECTOR (FLANGE) G E NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263 variant in Tape and Reel, i.e., HGT1S12N60C3DS9A. Symbol C G E FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4...