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HGT1N40N60A4D Dataheets PDF



Part Number HGT1N40N60A4D
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description N-Channel IGBT
Datasheet HGT1N40N60A4D DatasheetHGT1N40N60A4D Datasheet (PDF)

HGT1N40N60A4D Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGT1N40N60A4D is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT is ideal for many high voltage switching applicatio.

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HGT1N40N60A4D Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGT1N40N60A4D is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies. Formerly Developmental Type TA49349. Features • 100kHz Operation At 390V, 22A • 600V Switching SOA Capability • Typical Fall Time . . . . . . . . . . . . . . . . . 55ns at TJ = 125oC • Low Conduction Loss Symbol C G Ordering Information PART NUMBER HGT1N40N60A4D PACKAGE SOT-227 BRAND 40N60A4D E Packaging JEDEC STYLE SOT-227B GATE EMITTER NOTE: When ordering, use the entire part number. TAB (ISOLATED) COLLECTOR EMITTER Fairchild CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767 ©2001 Fairchild Semiconductor Corporation HGT1N40N60A4D Rev. B HGT1N40N60A4D Absolute Maximum Ratings TC = 25oC, Unless Otherwise Noted HGT1N40N60A4D 600 110 45 300 ±20 ±30 200A at 600V 298 2.3 2500 -55 to 150 1.5 1.7 UNITS V A A A V V W W/oC V oC N-m N-m Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES Collector Current Continuous At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate to Emitter Voltage Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGEM Switching Safe Operating Area at TJ = 150oC, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . SSOA Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . RMS Isolation Voltage, Any Terminal.


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