HY1506U

HY1506P/U/I N-Channel Enhancement Mode MOSFET Features 60V/55A, RDS(ON)=10.5 mΩ (typ.) @ VGS=10V Avalanche Rated Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) G D Pin Description S D S G S D G TO-220 I-PAK(TO-251) D TO-262 Applications Power Management for Inverter Systems. G S N-Channel MOSFET Ordering and Marking Information Package Code P HY1506 ÿ YYWWJ G U I HY1506 HY1506 ÿ YYWWJ G ÿ YYWWJ G P : TO220-3L D : I-PAK Date Code YYWW Assembly Material G : Lead Free Device I : TO262-3L Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. HOOYI lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. HOOYI defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). HOOYI reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. 1 www.hooyi-semi.com Free Datasheet http://www.datasheet4u.net/ HY1506P/U/I Absolute Maximum Ratings Symbol VDSS VGSS TJ TSTG IS IDM ID PD RθJC RθJA EAS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature St...