HY27UH08AGDM

HY27UH08AG(5/D)M Series 16Gbit (2Gx8bit) NAND Flash 16Gb NAND FLASH HY27UH08AG5M HY27UH08AGDM This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.6 / Dec. 2006 1 Free Datasheet http://www.datasheet4u.net/ HY27UH08AG(5/D)M Series 16Gbit (2Gx8bit) NAND Flash Document Title 16Gbit (2Gx8bit) NAND Flash Memory Revision History Revision No. 0.0 Initial Draft. 1) Add HY27UH08AG5M & HY27UH08AGDM Products. - Texts & figures are added. 2) Change Ac Characteristics tR Before After 20 25 tCLS 0.1 Before After 12 15 tAR 10 15 tWP 12 15 tDS 12 15 tREA 18 20 tWC 25 30 tRHZ 30 50 tADL 70 100 tCHZ 30 50 tRP 12 15 tCEA 25 35 tRC 25 30 Oct. 08. 2005 Preliminary History Draft Date Sep. 08. 2005 Remark Initial 3) Add tCRRH (100ns, Min) - tCRRH: cache Read RE# High 4) Change 3rd Read ID - 3rd Read ID is changed to C1h - 3rd Byte of Device Identifier Table is added. 5) Change NOP - Number of Partial Program Cycle in the same page is changed to 4. 6) Delete Concurrent Operation. 1) Change AC Characteristics 0.2 tREA Before After 1) 2) 3) 4) 0.3 Before After Rev. 0.6 / Dec. 2006 tCEA 35 30 tCS 20 25 20 25 Nov. 16. 2005 Preliminary Add ECC algorithm. (1bit/512bytes) Change NOP Correct Read ID naming Change DC characterics ICC1 Typ 30 30 Max 60 45 ICC2 Typ 30 30 Max 60 45 ICC3 Typ 30 30 Max 60 45 Jun. 20. 2006 Preliminary F r e e D a t a s h...