NT5SV8M16FS

NT5SV8M16FS / NT5SV8M16FT 128Mb Synchronous DRAM Features High Performance: Maximum Operating Speed CAS Latency 2 3 PC166 (6K/6KI) 7.5 6 PC133 (75B/75BI) 10 7.5 ns ns Single Pulsed RAS Interface Fully Synchronous to Positive Clock Edge Four Banks controlled by BA0/BA1 (Bank Select) Programmable CAS Latency: 2, 3 Programmable Burst Length: 1, 2, 4, 8 or full page Programmable Wrap: Sequential or Interleave Multiple Burst Read with Single Write Option Automatic and Controlled Precharge Command Dual Data Mask for byte control (x16) Auto Refresh (CBR) and Self Refresh Suspend Mode and Power Down Mode Standard Power operation Random Column Address every CK (1-N Rule) Single Power Supply, either 3.3V LVTTL compatible Packages: TSOP-Type II Lead-free & Halogen-free product available Description The NT5SV8M16FS, and NT5SV8M16FT are four-bank Synchronous DRAMs organized as 2Mbit x 16 I/O x 4 Bank. These synchronous devices achieve high-speed data transfer rates of up to 166MHz by employing a pipeline chip architecture that synchronizes the output data to a system clock. The device is designed to comply with all JEDEC standards set for synchronous DRAM products, both electrically and mechanically. All of the control, address, and data input/output (I/O or DQ) circuits are synchronized with the positive edge of an externally supplied clock. RAS, CAS, WE, and CS are pulsed signals which are examined at the positive edge of each externally appli...