Transistors
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC2406
Silicon NPN epitaxial planar type
...
Transistors
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC2406
Silicon
NPN epitaxial planar type
For low-frequency and low-noise amplification Complementary to 2SA1035
Features
Package
Low noise voltage NV
Code
High forward current transfer ratio hFE Mini type package, allowing downsizing of the equipment and automatic
insertion through the tape packing.
Mini3-G1 Pin Name
1. Base
/ Absolute Maximum Ratings Ta = 25°C
2. Emitter 3. Collector
Parameter
Symbol Rating
Unit
e ) Collector-base voltage (Emitter open) c type Collector-emitter voltage (Base open) n d tage. ued Emitter-base voltage (Collector open)
le s ontin Collector current
a elifecyc disc Peak collector current n u t ed, Collector power dissipation
roduc d typ Junction temperature
te tin ur P tinue Storagetemperature
VCBO
55
V
VCEO
55
V
VEBO
5
V
IC
50
mA
ICP
100
mA
PC
200
mW
Tj
150
°C
Tstg –55 to +150 °C
Marking Symbol: T
in n followingefdodiscon Electrical Characteristics Ta = 25°C±3°C
es plan Parameter
Symbol
Conditions
a o includ type, Collector-base voltage (Emitter open)
VCBO IC = 10 mA, IE = 0
c ed ce Collector-emitter voltage (Base open) M is ntinu tenan Emitter-base voltage (Collector open)
isco ain Base-emitter voltage e/D e, m Collector-base cutoff current (Emitter open)
D anc typ Collector-emitter cutoff current (Base open)
inten ance Forward current transfer ratio * Ma inten Collector-emitter saturation voltage ma Transit...
