D40N10-25

SUD40N10-25 New Product Vishay Siliconix N-Channel 100-V (D-S) 175_C MOSFET PRODUCT SUMMARY VDS (V) 100 rDS(on) (W) 0.025 @ VGS = 10 V 0.028 @ VGS = 4.5 V ID (A) 40 38 D TO-252 G Drain Connected to Tab G D S Top View Order Number: SUD40N10-25 S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C)b Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Current Repetitive Avalanche Energy (Duty Cycle v 1%) Maximum Power Dissipation Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25_C TA = 25_C PD TJ, Tstg TC = 25_C TC = 125_C Symbol VDS VGS ID IDM IS IAR EAR Limit 100 "20 40 23 70 40 40 80 33b 3a –55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambienta Junction-to-Case Notes a. Surface Mounted on 1” x1” FR4 Board. b. See SOA curve for voltage derating. Document Number: 71140 S–00171—Rev. A, 14-Feb-00 www.vishay.com S FaxBack 408-970-5600 t v 10 sec Steady State Symbol RthJA RthJC Typical 15 40 1.2 Maximum 18 50 1.5 Unit _C/W 2-1 Free Datasheet http://www.datasheet4u.net/ SUD40N10-25 Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 80 V, VGS = 0 V Zero Gate Voltage Dra...