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IRLI3705NPBF
Power MOSFET
Description
Logic –Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free IRLI3705NPbF HEXFET® Power MOSFET VDSS RDS(on) ID 55V 0.01 52A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing technique...
International Rectifier
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